Resistive Random Access Memory Stores Information by Changing the Resistance Across A Dielectric Solid-State Material Called Memristor


Increasing demand for data storage, analytics and AI processing at the edge requires unprecedented energy efficiency of the underlying hardware. Compute-in-memory (CIM) based on resistive random access memory (RRAM) promises to meet this requirement by storing AI model weights and performing neural network computation directly on the same device, eliminating power-hungry data movement between separate compute and storage components.

The memory function is based on the memory cell switching between a high and low resistance state as a result of application of an electrical current. The switching process can be unipolar or bipolar, depending on the application of the voltage The storage density of Resistive Random Access Memory is higher than that of flash memory and other emerging non-volatile memory technologies, which are primarily used in portable devices like smartphones and tablets. The memory technology has the potential to provide resistance against physical attacks and reverse engineering techniques.

According to Coherent Market Insights the Resistive Random Access Memory Market Industry Insights, Trends, Outlook, and Opportunity Analysis, 2022-2028.

ReRAM is currently undergoing rapid development and the technology has been implemented in a number of applications including automotive, IoT, wearables, and healthcare. In the future, it could also be used in applications such as neuromorphic computing, which requires high memory performance. This is due to the fact that it provides high speed and power efficiency for processing data, which makes it ideal for neuromorphic hardware Various manufacturers are investing in this technology to offer reliable and cost-effective products. Crossbar Inc. is working to create a new type of resistive memory that will use a combination of a few-time-programmable ReRAM, acceleration hardware, optimized neural networks, and advanced learning capabilities. This will enable the company to provide a secure and high-performance non-volatile memory for neural network training and applications.

Another important advancement in Resistive Random Access Memory is the self-compliance mechanism, which increases the endurance of the device by reducing the amount of read voltage stress applied to the device. The technology uses a thermal sensor to measure the temperature of the cell and extracts the activation energy by comparing it to the threshold voltage of the cell at the same temperature Fujitsu Semiconductor Memory Solution Limited introduced a 12Mbit ReRAM, MB85AS12MT, in March 2022. This invention has a high memory capacity of 12Mbit in a compact package size.

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